NSN 5962-01-173-7145 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-173-7145 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011737145 |
| NCB Code: USA (01) |
| Manufacturers: Datametrics Corporation , Rugged Information Technology , Mmi Amd , Philips Semiconductors Inc , Fairchild Semiconductor Corp , Advanced Micro Devices Inc , Intersil Corporation , Intel Corp , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-173-7145, 5962011737145
| datametrics corporation | rugged information technology | mmi amd |
| philips semiconductors inc | fairchild semiconductor corp | advanced micro devices inc |
| intersil corporation | intel corp | dla land and maritime |
Part Number Related To NSN 5962-01-173-7145, 5962011737145
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 108626 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| 108626 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| 5301-1 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| 82S129 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| 93427 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| AM27S11 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| HM7611 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| IM5623 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| M3621 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 005 | 5962-01-173-7145 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011737145
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.740 INCHES MINIMUM AND 0.810 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 307.2 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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