NSN 5962-01-169-6019 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-169-6019 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011696019 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company , Fairchild Semiconductor Corp , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-169-6019, 5962011696019
Part Number Related To NSN 5962-01-169-6019, 5962011696019
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 890510-67 | 5962-01-169-6019 | microcircuit memory | Avl | RFQ |
| 93446 | 5962-01-169-6019 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 008 | 5962-01-169-6019 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011696019
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.199 INCHES NOMINAL |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND SCHOTTKY AND WIRE-OR OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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