NSN 5962-01-161-3538 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-161-3538 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011613538 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Military Specifications , Philips Semiconductors Inc , Lockheed Martin Corporation |
Manufacturer's List for NSN 5962-01-161-3538, 5962011613538
| dla land and maritime | military specifications | philips semiconductors inc |
| lockheed martin corporation |
Part Number Related To NSN 5962-01-161-3538, 5962011613538
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 029 | 5962-01-161-3538 | microcircuit memory | Avl | RFQ |
| M38510/21002BJB | 5962-01-161-3538 | microcircuit memory | Avl | RFQ |
| 82S191 | 5962-01-161-3538 | microcircuit memory | Avl | RFQ |
| 77A102362P001 | 5962-01-161-3538 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011613538
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/FPS-117 RADAR SYSTEM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND W/ACTIVE PULL-UP |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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