NSN 5962-01-159-3854 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-159-3854 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011593854 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corp , Lockheed Martin Corporation |
Manufacturer's List for NSN 5962-01-159-3854, 5962011593854
Part Number Related To NSN 5962-01-159-3854, 5962011593854
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MD2147H-2 | 5962-01-159-3854 | microcircuit memory | Avl | RFQ |
| D2147H-2 | 5962-01-159-3854 | microcircuit memory | Avl | RFQ |
| 63A133591P4 | 5962-01-159-3854 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011593854
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH PERFORMANCE AND 3-STATE OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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