NSN 5962-01-151-2860 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-151-2860 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011512860 |
| NCB Code: USA (01) |
| Manufacturers: Intel Corp , Keysight Technologies Inc , Hewlett Packard Company |
Manufacturer's List for NSN 5962-01-151-2860, 5962011512860
Part Number Related To NSN 5962-01-151-2860, 5962011512860
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| P5101L-3 | 5962-01-151-2860 | microcircuit memory | Avl | RFQ |
| 1818-0319 | 5962-01-151-2860 | microcircuit memory | Avl | RFQ |
| 1818-0319 | 5962-01-151-2860 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011512860
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.090 INCHES MINIMUM AND 1.120 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.340 INCHES MINIMUM AND 0.360 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 4935-01-123-1278 GENERATOR,PULSE |
| CBBL | FEATURES PROVIDED | LOW POWER AND 3-STATE OUTPUT AND HIGH PERFORMANCE |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CRHL | BIT QUANTITY | 1024 |
| CSWJ | WORD QUANTITY | 256 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.3 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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