NSN 5962-01-135-5163 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-135-5163 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011355163 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company , Rochester Electronics Llc , Intel Corp , Lockheed Martin Corporation , Harris Corporation |
Manufacturer's List for NSN 5962-01-135-5163, 5962011355163
| raytheon company | rochester electronics llc | intel corp |
| lockheed martin corporation | harris corporation |
Part Number Related To NSN 5962-01-135-5163, 5962011355163
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| PA60172-1 | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| MD2114AL-3 B | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| MD2114AL-3 B | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| MD2114A B | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| MD2114 B | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| 896336-1 | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| 808823-4 | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| 63A140388P455-7 | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
| 167900-001 | 5962-01-135-5163 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011355163
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.900 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.260 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | BIT VERIFICAT E/I FSCM 82577 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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