NSN 5962-01-125-8104 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-125-8104 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011258104 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Bae Systems Controls Inc , Nimikkeistokeskus Ncb Finland |
Manufacturer's List for NSN 5962-01-125-8104, 5962011258104
| advanced micro devices inc | dla land and maritime | bae systems controls inc |
| nimikkeistokeskus ncb finland |
Part Number Related To NSN 5962-01-125-8104, 5962011258104
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SM975 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 013 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
| MM5331 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
| 283A8191P1 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
| 144A9555P1 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
| 10133805 | 5962-01-125-8104 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011258104
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMED AND HERMETICALLY SEALED AND BURN IN |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | PROGRAMMED 32 X 8 PROM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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