NSN 5962-01-116-1004 of Microcircuit Memory - Product Details
Just NSN Parts, owned and operated by ASAP Semiconductor, is an industry-leading distributor of NSN 5962-01-116-1004 parts applicable in the aviation and defense industries. We aim to simplify the NSN 5962-01-116-1004 parts procurement process by enabling our customers to search through our inventory quickly and efficiently. Type in your desired NSN 5962-01-116-1004 part number such as N82S185-F, 4014666-415, 4014397-01 into our search engine and, in a matter of seconds, available stock will appear.
We pride ourselves on our attention to detail and focus on quality control. We are FAA AC 0056B accredited and AS9120B, ISO 9001:2015 certified. We offer our customers a personalized and reliable service that will change your parts procurement process. If you would like to receive a quote today, fill out a request for quote form today.
Alternative NSN: 5962-01-116-1004 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011161004 |
NCB Code: USA (01) |
Manufacturers: Philips Semiconductors Inc , L 3 Communications Corporation , Raytheon Technical Services Company |
Manufacturer's List for NSN 5962-01-116-1004, 5962011161004
Part Number Related To NSN 5962-01-116-1004, 5962011161004
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
N82S185-F | 5962-01-116-1004 | microcircuit memory | Avl | RFQ |
4014666-415 | 5962-01-116-1004 | microcircuit memory | Avl | RFQ |
4014666-415 | 5962-01-116-1004 | microcircuit memory | Avl | RFQ |
4014397-01 | 5962-01-116-1004 | microcircuit memory | Avl | RFQ |
4014397-01 | 5962-01-116-1004 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011161004
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.160 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |