NSN 5962-01-115-6148 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-115-6148 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011156148 |
NCB Code: USA (01) |
Manufacturers: Philips Semiconductors Inc , L 3 Communications Corporation , Raytheon Technical Services Company |
Manufacturer's List for NSN 5962-01-115-6148, 5962011156148
Part Number Related To NSN 5962-01-115-6148, 5962011156148
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
N82S185-F | 5962-01-115-6148 | microcircuit memory | Avl | RFQ |
4014666-128 | 5962-01-115-6148 | microcircuit memory | Avl | RFQ |
4014666-128 | 5962-01-115-6148 | microcircuit memory | Avl | RFQ |
4014397-01 | 5962-01-115-6148 | microcircuit memory | Avl | RFQ |
4014397-01 | 5962-01-115-6148 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011156148
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.925 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.302 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |