NSN 5962-01-111-1252 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-111-1252 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011111252 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Raytheon Company |
Manufacturer's List for NSN 5962-01-111-1252, 5962011111252
Part Number Related To NSN 5962-01-111-1252, 5962011111252
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM/PROM FAMILY 008 | 5962-01-111-1252 | microcircuit memory | Avl | RFQ |
| 722906-50 | 5962-01-111-1252 | microcircuit memory | Avl | RFQ |
| 45674-1 | 5962-01-111-1252 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011111252
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND MONOLITHIC AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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