NSN 5962-01-107-8407 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-107-8407 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011078407 |
| NCB Code: USA (01) |
| Manufacturers: Northrop Grumman Systems Corporation , Intel Corp |
Manufacturer's List for NSN 5962-01-107-8407, 5962011078407
Part Number Related To NSN 5962-01-107-8407, 5962011078407
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| GM820AMA2 | 5962-01-107-8407 | microcircuit memory | Avl | RFQ |
| D2142 | 5962-01-107-8407 | microcircuit memory | Avl | RFQ |
| C2142L3 | 5962-01-107-8407 | microcircuit memory | Avl | RFQ |
| C2142 | 5962-01-107-8407 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011078407
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT AND W/ENABLE AND W/CLOCKED OUTPUTS AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CRHL | BIT QUANTITY | 4096 |
| CSWJ | WORD QUANTITY | 1024 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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