NSN 5962-01-102-3846 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-102-3846 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011023846 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Technical Services Company , Boeing Company The , Northrop Grumman Systems Corporation , Fairchild Semiconductor Corp , Military Specifications , Mmi Amd , Lockheed Martin Corporation , E2v Inc , General Dynamics Information Systems , Bae Systems Inc , Advanced Micro Devices Inc , Intel Corp , National Semiconductor Corporation , Raven Electronics Corporation , Intersil Corporation , Philips Semiconductors Inc , Dla Land And Maritime , Lansdale Semiconductor Inc |
Manufacturer's List for NSN 5962-01-102-3846, 5962011023846
Part Number Related To NSN 5962-01-102-3846, 5962011023846
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1004487-01 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 4004785-01 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 4004785-08 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 477-1336-031 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 477-1768-003 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 583R350H01 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 583R350H01 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 5962-3820802BJA | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 5962-3820802BJB | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 5962-3820802BJX | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 6341-1J | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 7849878P001 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 82S141 BJA | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 85694600-03 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| 9402-00129 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| AMD9214DM | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| D3624 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| DM54S474J | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| DM54S474J MIL | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| H201-3624-04 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| HM1-7641-5 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| IM5625-CJG | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| JM38510/20802BJX | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| M38510/20802BJ | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| M38510/20802BJA | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| M38510/20802BJB | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| MIL-M-38510/208 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| N82S141F | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 026 | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| S82S141I 883B | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
| SL82S141 BJA | 5962-01-102-3846 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011023846
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/208/USAF/ GOVERNMENT SPECIFICATION |
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