NSN 5962-01-078-0181 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-078-0181 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010780181 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , Dla Land And Maritime , Mmi Amd , Fairchild Semiconductor Corp , Intersil Corporation , Advanced Micro Devices Inc , Raytheon Company |
Manufacturer's List for NSN 5962-01-078-0181, 5962010780181
| philips semiconductors inc | dla land and maritime | mmi amd |
| fairchild semiconductor corp | intersil corporation | advanced micro devices inc |
| raytheon company |
Part Number Related To NSN 5962-01-078-0181, 5962010780181
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| S82S137F | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 017 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| MM5353-1J | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| HR10700 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| HM9-7643-B2052-2 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| DH75703-2 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| CC5194-2 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| B2052-2 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| 932883-2 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
| 17985 | 5962-01-078-0181 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010780181
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 532.5 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/ENABLE AND W/DECODED OUTPUT AND BIPOLAR AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 82577-932883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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