NSN 5962-01-076-7968 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-076-7968 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010767968 |
| NCB Code: USA (01) |
| Manufacturers: Mmi Amd , Raytheon Company , Intersil Corporation , Philips Semiconductors Inc , Advanced Micro Devices Inc , Dla Land And Maritime , Texas Instruments Inc |
Manufacturer's List for NSN 5962-01-076-7968, 5962010767968
| mmi amd | raytheon company | intersil corporation |
| philips semiconductors inc | advanced micro devices inc | dla land and maritime |
| texas instruments inc |
Part Number Related To NSN 5962-01-076-7968, 5962010767968
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 17920 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| 932821-40 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| B2051-40 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| CC5190-40 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| DH75682-40 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| HM9-7603-2 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| MM5331-1F | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 019 | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| S82S123W | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
| SN54S288W | 5962-01-076-7968 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010767968
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 84.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 82577-932821 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
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