NSN 5962-01-050-6922 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-050-6922 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010506922 |
| NCB Code: USA (01) |
| Manufacturers: Mmi Amd , Texas Instruments Inc , Intersil Corporation , Intel Corp , Bae Systems Inc , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-050-6922, 5962010506922
Part Number Related To NSN 5962-01-050-6922, 5962010506922
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 7013655P014 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| 7013655P014 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| 7013655P014 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| 7013655P014 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| 7013655P014 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| C3301A | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| HM1-7610-8 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| HPROM1-1024A-5 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| IM5603CDE | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| MM6200-1J | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 021 | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
| SN74187J | 5962-01-050-6922 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010506922
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 657.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR AND SCHOTTKY AND BIPOLAR AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE AND W/DISABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | 0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 94117-7013655 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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