NSN 5962-01-047-2035 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-047-2035 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010472035 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instruments Inc , Freescale Semiconductor Inc , Dla Land And Maritime , Intel Corp , Nec Electronics Usa Inc Electron , Lockheed Martin Corporation , Northrop Grumman Systems Corporation , Interlink Communications Inc |
Manufacturer's List for NSN 5962-01-047-2035, 5962010472035
Part Number Related To NSN 5962-01-047-2035, 5962010472035
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ZA0700JM | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| TMS2708-45JDL | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| SCM37502L | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 014 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| MD2708 B | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| MCM2708BJBJC | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| MC2708 B | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| H8708 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| EA2708-6 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| CCA3329 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| C8857-1 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| 989C289H01 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
| 40-018015-01 | 5962-01-047-2035 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010472035
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.320 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED AND 3-STATE OUTPUT AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND METAL |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 15.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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