NSN 5962-01-033-2288 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-033-2288 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010332288 |
| NCB Code: USA (01) |
| Manufacturers: Northrop Grumman Systems Corporation , Drs Network And Imaging Systems Llc , Sierra Ic Inc , Harris Corp Findlay Opns , Intersil Corporation , Raytheon E Systems Inc |
Manufacturer's List for NSN 5962-01-033-2288, 5962010332288
| northrop grumman systems corporation | drs network and imaging systems llc | sierra ic inc |
| harris corp findlay opns | intersil corporation | raytheon e systems inc |
Part Number Related To NSN 5962-01-033-2288, 5962010332288
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 134693-1 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| 232 53-1918 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| 3512 830 06831 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| CD40103BD | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| CD40103BD 3 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| CD40103BF 3 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| CD40103BF 3A | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
| MC-A1103-001 | 5962-01-033-2288 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010332288
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.095 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | COUNTERMEASURES SET TYPE AN/ALQ-17A FSCM 72314 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM SPEED AND ASYNCHRONOUS AND PRESETTABLE AND SYNCHRONOUS AND W/ENABLE AND W/CLEAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 STAGE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | 0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-STD-883 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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