NSN 5962-00-236-8192 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-00-236-8192 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 002368192 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instruments Inc , Lacon Electronic Gmbh , Adelco Elektronik Gmbh , Drs Icas Llc , Northrop Grumman Systems Corporation , National Semiconductor Corporation , Lockheed Martin Corporation , Thales Communications And Security , Airco Republic Electronics Inc |
Manufacturer's List for NSN 5962-00-236-8192, 5962002368192
Part Number Related To NSN 5962-00-236-8192, 5962002368192
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SN54193N | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| SN54193JA | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| SN54193JA | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| SN54193J-00 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| SN54193J | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| SC5962-0009-1 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| GM820KD2 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| DM8563D | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| DM7563J | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| DM7563D | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| C6660-3 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| 489719 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
| 17007016 | 5962-00-236-8192 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962002368192
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 325.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND EDGE TRIGGERED AND POSITIVE OUTPUTS AND PRESETTABLE AND PROGRAMMABLE AND SYNCHRONOUS AND W/CLEAR AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 95750-17007016 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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