NSN 5961-01-400-1651 of Semiconductor Devic - Product Details
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| Alternative NSN: 5961-01-400-1651 |
| Item Name:Semiconductor Devic |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 014001651 |
| NCB Code: USA (01) |
| Manufacturers: Nimikkeistokeskus Ncb Finland , Raytheon Company , International Rectifier Corporat , Semitronics Corp , Natel Engineering Company Inc , Freescale Semiconductor Inc |
Manufacturer's List for NSN 5961-01-400-1651, 5961014001651
| nimikkeistokeskus ncb finland | raytheon company | international rectifier corporat |
| semitronics corp | natel engineering company inc | freescale semiconductor inc |
Part Number Related To NSN 5961-01-400-1651, 5961014001651
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 10133499 | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
| H8000313-001T | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
| OM3420ST | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
| SES729 | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
| SMC51069 | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
| X2N6396X | 5961-01-400-1651 | semiconductor devic | Avl | RFQ |
Characteristics Data of NSN 5961014001651
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| ABBH | INCLOSURE MATERIAL | METAL |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| ABMK | OVERALL WIDTH | 16.38 MILLIMETERS MAXIMUM |
| ABKW | OVERALL HEIGHT | 5.08 MILLIMETERS MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-257AA |
| ABHP | OVERALL LENGTH | 16.89 MILLIMETERS MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 100.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT |
| TEST | TEST DATA DOCUMENT | 82577-H8000313 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION |
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