NSN 5961-01-273-0764 of Transistor - Product Details
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Alternative NSN: 5961-01-273-0764 |
Item Name:Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 012730764 |
NCB Code: USA (01) |
Manufacturers: Rs Components Limited , International Rectifier Corporation , Raytheon Company , Lockheed Martin Corporation , Airbus Defence And Space Limited , Thales Sa , National Semiconductor Corporation , Intersil Corporation , Micro Uspd Inc , Infineon Technologies Americas Corp , Freescale Semiconductor Inc , Fairchild Semiconductor Corp , Siliconix Incorporated , Semitronics Corp |
Manufacturer's List for NSN 5961-01-273-0764, 5961012730764
Part Number Related To NSN 5961-01-273-0764, 5961012730764
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
192-7849 | 5961-01-273-0764 | transistor | Avl | RFQ |
1RF141 | 5961-01-273-0764 | transistor | Avl | RFQ |
2830678 | 5961-01-273-0764 | transistor | Avl | RFQ |
47A529818P2 | 5961-01-273-0764 | transistor | Avl | RFQ |
5L.5501.002.49 | 5961-01-273-0764 | transistor | Avl | RFQ |
99133768 | 5961-01-273-0764 | transistor | Avl | RFQ |
DM54LS155J | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF141 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF250 | 5961-01-273-0764 | transistor | Avl | RFQ |
IRF251 | 5961-01-273-0764 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961012730764
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKDOWN VOLTAGE,DRAIN-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |