NSN 5961-01-257-3586 of Transistor - Product Details
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| Alternative NSN: 5961-01-257-3586 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012573586 |
| NCB Code: USA (01) |
| Manufacturers: Csts Inc , International Rectifier Corporation , Raytheon Company , Joint Army-Navy Specifications , Military Specifications |
Manufacturer's List for NSN 5961-01-257-3586, 5961012573586
| csts inc | international rectifier corporation | raytheon company |
| joint army-navy specifications | military specifications |
Part Number Related To NSN 5961-01-257-3586, 5961012573586
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 25606 | 5961-01-257-3586 | transistor | Avl | RFQ |
| 2N6849 | 5961-01-257-3586 | transistor | Avl | RFQ |
| G369620-1 | 5961-01-257-3586 | transistor | Avl | RFQ |
| IRFF9130 | 5961-01-257-3586 | transistor | Avl | RFQ |
| JANTX2N6849 | 5961-01-257-3586 | transistor | Avl | RFQ |
| JANTX2N6849 | 5961-01-257-3586 | transistor | Avl | RFQ |
| MIL-PRF-19500/564 | 5961-01-257-3586 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961012573586
| MRC | Criteria | Characteristic |
|---|---|---|
| CTRD | POWER RATING PER CHARACTERISTIC | 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.750 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | NSN 5895-01-277-2680; CONTROL,RECEIVER-TRANSMITTER |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-205AF |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND-100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 6.50 AMPERES MAXIMUM DRAIN CURRENT |
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