NSN 5961-01-008-2608 of Semiconductor Device Diode - Product Details
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| Alternative NSN: 5961-01-008-2608 |
| Item Name:Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010082608 |
| NCB Code: USA (01) |
| Manufacturers: Cobham Advanced Electronic Solutions , Microsemi Corp Massachusetts , Rockwell Collins Aerospace |
Manufacturer's List for NSN 5961-01-008-2608, 5961010082608
Part Number Related To NSN 5961-01-008-2608, 5961010082608
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| MA45683GRAY DOT | 5961-01-008-2608 | semiconductor device diode | Avl | RFQ |
| GC10 003GRAY DOT | 5961-01-008-2608 | semiconductor device diode | Avl | RFQ |
| 922-6118-052 | 5961-01-008-2608 | semiconductor device diode | Avl | RFQ |
Characteristics Data of NSN 5961010082608
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.092 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.120 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | PRESS FIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 69.4 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT,PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | CERAMIC INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 RIBBON |
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