NSN 5961-00-179-7808 of Transistor - Product Details
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| Alternative NSN: 5961-00-179-7808 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001797808 |
| NCB Code: USA (00) |
| Manufacturers: Raytheon Company , Electronic Industries Inc , Hamilton Sundstrand Corporation , Bow Industries Of Virginia Inc , Thales Communications And Security , Semiconductor Technology Inc , North American Philips Corp , Central Semiconductor Corp , Semicoa Corporation Sales , Fairchild Semiconductor Corp , Texas Instruments Inc , Honeywell Intl Inc |
Manufacturer's List for NSN 5961-00-179-7808, 5961001797808
Part Number Related To NSN 5961-00-179-7808, 5961001797808
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| RT1209 | 5961-00-179-7808 | transistor | Avl | RFQ |
| RELEASE5457 | 5961-00-179-7808 | transistor | Avl | RFQ |
| GS5661-26 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 790-343-05 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 651507 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 2N5059 | 5961-00-179-7808 | transistor | Avl | RFQ |
| 10029836-102 | 5961-00-179-7808 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961001797808
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN AND 250.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 33.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR MINIMUM |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5454 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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