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IDT203L20TDB by Integrated Device Technology Inc - Receive a Competitive Quote

Part Number: IDT203L20TDB Manufacturer: Integrated Device Technology Inc NSN : 5962-01-491-2679 Item Name : Microcircuit Memory CAGE Code: 61772 FSC : 5962 Microcircuits Electronic

We’re excited to announce that IDT203L20TDB NSN part is now available and ready for immediate shipping. Part number IDT203L20TDB is a Microcircuit Memory manufactured by Integrated Device Technology Inc with NSN 5962014912679. Are you interested in a quick and competitive quote for this part?

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Just NSN Parts, owned and operated by ASAP Semiconductor, is a leading distributor of NSN (National Stock Number) parts, new and obsolete. Because of our dedication to quality, we’re the only independent distributor in the United States with a strict No China Sourcing Pledge. We’re also an AS9120B, ISO 9001:2015 certified, and FAA AC 0056B accredited member of the Aviation Suppliers Association (ASA). Our vast and comprehensive inventory of over 2 billion parts coupled with our shipping facilities in Washington, Oregon, California, New Maxico, Nevada, Arizona, Illinois, Minnesota, Pennsylvania, and New York, allow us to offer you some of the fastest delivery times in the industry.

If you’d like to learn more about NSN part number IDT203L20TDB Microcircuit Memory, feel free to call us at our toll-free number, +1-714-705-4780, or email us at sales@justnsnparts.com. And, if you’d like to stay informed on new inventory or any promotions, feel free to download the ASAP Semiconductor App from Google Play or the App Store.

NSN Information for Part Number IDT203L20TDB with NSN 5962-01-491-2679, 5962014912679

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-491-2679

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620149126790NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
2009657-001527

Characteristics Data of NSN 5962-01-491-2679, 5962014912679

MRCCriteriaCharacteristic
AGAVIII END ITEM IDENTIFICATIONRADAR THREAT EMITTER AN/MST-T1; M3P REU-L
CZEQTIME RATING PER CHACTERISTIC20.00 NANOSECONDS NOMINAL ACCESS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CSWJ(NON-CORE DATA) WORD QUANTITY2048
CBBLFEATURES PROVIDEDHIGH SPEED AND LOW POWER AND ASYNCHRONOUS
FEATSPECIAL FEATURES2,048 X 9-BIT; THIN CERAMIC DIP
CQSJINCLOSURE MATERIALCERAMIC
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
AFJQSTORAGE TEMP RANGE-65.0 TO 155.0 DEG CELSIUS
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYCMOS ASYNCHRONOUS FIFO
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
CZERMEMORY DEVICE TYPEFIRST-IN FIRST-OUT