NSN 5962-01-468-5930 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-468-5930 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014685930 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Cypress Semiconductor Corporatio |
Manufacturer's List for NSN 5962-01-468-5930, 5962014685930
Part Number Related To NSN 5962-01-468-5930, 5962014685930
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-94510 | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
| 5962-9451003MXA | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
| 5962-9451003MXB | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
| 5962-9451003MXX | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
| CY7C335-83WMB | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
| ROM/PROM | 5962-01-468-5930 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014685930
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON |
| SR-1 | MANUFACTURERS CODE | 67268 |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-94510 |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZER | MEMORY DEVICE TYPE | EPROM |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-9451003MXA |
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