NSN 5962-01-211-4664 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-211-4664 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012114664 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Inc , Lockheed Corp , Inspektorat Wsparcia Sil Zbrojnych , Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Lockheed Martin Corporation , Advanced Micro Devices Inc , Raytheon Company , Sgs Thomson |
Manufacturer's List for NSN 5962-01-211-4664, 5962012114664
Part Number Related To NSN 5962-01-211-4664, 5962012114664
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 16001636 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| 16001636 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| 5962PL0930418 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| 6011258-001 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| 77A102493P001 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| AM2167 55 BRA | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| G286466-1 | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
| IMS1400S-55M | 5962-01-211-4664 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012114664
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.000 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.310 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.098 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AIRCRAFT,F-16;AIRCRAFT,GALAXY C-5; SUPPORT EQUIPMENT,B-1 AIRCRAFT,BALLISTIC MISSILE EARLY WARNING STS BMEWS ; PAVE PHASED ARRAY WARNING SYSTEM PAWS ; AIRCRAFT,STRATOLIFTER C-135; OVER THE HORIZON BACK SCANNER OTH-B PROGRAM AN/FPS |
| CBBL | FEATURES PROVIDED | HIGH PERFORMANCE AND STATIC OPERATION AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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