NSN 5962-01-135-2108 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-135-2108 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011352108 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-135-2108, 5962011352108
Part Number Related To NSN 5962-01-135-2108, 5962011352108
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 37651551-001 | 5962-01-135-2108 | microcircuit memory | Avl | RFQ |
| 37651735-006 | 5962-01-135-2108 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 018 | 5962-01-135-2108 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011352108
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.310 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.052 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 400.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0/75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | TRAINING DEV 08783 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND EXPANDABLE AND WIRE-OR OUTPUTS AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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