NSN 5962-01-123-4335 of Microcircuit Memory - Product Details
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Alternative NSN: 5962-01-123-4335 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011234335 |
NCB Code: USA (01) |
Manufacturers: Mmi Amd , Advanced Micro Devices Inc , Raytheon Company , Fairchild Semiconductor Corp , Intersil Corporation , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-123-4335, 5962011234335
mmi amd | advanced micro devices inc | raytheon company |
fairchild semiconductor corp | intersil corporation | dla land and maritime |
Part Number Related To NSN 5962-01-123-4335, 5962011234335
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
18536 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
27S33 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
5353-1F | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
53S441-F | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
932883-413 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
93453 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
B1614-1B | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
B2052-413 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
DH75699 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
HL42543 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
HM7643 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
HM9-7643-B2052-413 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
HR10735 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
MM5353 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 017 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
SD948 | 5962-01-123-4335 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011234335
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.090 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 175.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN,MIL-STD-883,CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | GLASS AND METAL |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 82577-932883 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
TTQY | TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |