NSN 5962-01-112-2727 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-112-2727 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011122727 |
| NCB Code: USA (01) |
| Manufacturers: Moog Inc , Sypris Electronics Llc , Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Warner Robins Air Logistics Center , Raytheon Company , Advanced Micro Devices Inc , Lockheed Martin Corporation , Dla Land And Maritime , Synertek |
Manufacturer's List for NSN 5962-01-112-2727, 5962011122727
Part Number Related To NSN 5962-01-112-2727, 5962011122727
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 129-415-0004-05 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| 34031040-001 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| 6010445-001 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| 8525287 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| 911726-2 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| AM9101C DMC | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| AM9101CDMB | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| AM9101CMB | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| C10736-1 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| C2101 1 883B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| DMS 88016B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| SYM2101-1C0253 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| SYM2101-1C10253 | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
| SYMC2101-1-883B | 5962-01-112-2727 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011122727
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.380 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND W/DISABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81755-C10736 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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