NSN 5962-01-111-7483 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-111-7483 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011117483 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company , Dla Land And Maritime |
Manufacturer's List for NSN 5962-01-111-7483, 5962011117483
Part Number Related To NSN 5962-01-111-7483, 5962011117483
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 45715-1 | 5962-01-111-7483 | microcircuit memory | Avl | RFQ |
| 722906-50 | 5962-01-111-7483 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 008 | 5962-01-111-7483 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011117483
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CRHL | BIT QUANTITY | 2048 |
| CSWJ | WORD QUANTITY | 512 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 05869-726009-1 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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