NSN 5962-01-099-8512 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-099-8512 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010998512 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , National Semiconductor Corporation , Mmi Amd , Fairchild Semiconductor Corp , Advanced Micro Devices Inc , Keysight Technologies Inc , Hewlett Packard Company |
Manufacturer's List for NSN 5962-01-099-8512, 5962010998512
| philips semiconductors inc | national semiconductor corporation | mmi amd |
| fairchild semiconductor corp | advanced micro devices inc | keysight technologies inc |
| hewlett packard company |
Part Number Related To NSN 5962-01-099-8512, 5962010998512
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 1816-0138 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 6300-1 | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| 93417PC | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| AM27S20PC | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| DM74S387N | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
| N82S126N | 5962-01-099-8512 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010998512
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.199 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/DECODED OUTPUT AND SCHOTTKY AND PROGRAMMABLE AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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