NSN 5962-01-027-5651 of Microcircuit Memory - Product Details
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| Alternative NSN: 5962-01-027-5651 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010275651 |
| NCB Code: USA (01) |
| Manufacturers: Lockheed Martin Corporation , Advanced Micro Devices Inc , National Semiconductor Corporation , Harris Corp , Intersil Corporation , Texas Instruments Inc , Dla Land And Maritime , Philips Semiconductors Inc |
Manufacturer's List for NSN 5962-01-027-5651, 5962010275651
| lockheed martin corporation | advanced micro devices inc | national semiconductor corporation |
| harris corp | intersil corporation | texas instruments inc |
| dla land and maritime | philips semiconductors inc |
Part Number Related To NSN 5962-01-027-5651, 5962010275651
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 7907194-05 | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| AM27S19DMB | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| DM54S288J 883 | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| G390452S15 | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| G390452S36 | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| IM5610MDE | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| JBP18S030MJ | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| ROM/PROM FAMILY 013 | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
| S82S123F 883B | 5962-01-027-5651 | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010275651
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.808 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.294 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.154 INCHES MINIMUM AND 0.179 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | 65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/SPS-48A V FCADT FSCM 24930 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 24930-G390452 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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