NSN 5961-01-104-8309 of Transistor - Product Details
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| Alternative NSN: 5961-01-104-8309 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011048309 |
| NCB Code: USA (01) |
| Manufacturers: Arnoux Corp |
Manufacturer's List for NSN 5961-01-104-8309, 5961011048309
Part Number Related To NSN 5961-01-104-8309, 5961011048309
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 200003 | 5961-01-104-8309 | transistor | Avl | RFQ |
| 200037 | 5961-01-104-8309 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961011048309
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | SLECTED 2N3904 JEDEC DWG TYPE TRANSISTOR; LOW LEAKAGE 0.5 NANO AMP; JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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