NSN 5961-01-411-0312 of Semiconductor Devic - Product Details
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Alternative NSN: 5961-01-411-0312 |
Item Name:Semiconductor Devic |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 014110312 |
NCB Code: USA (01) |
Manufacturers: Nimikkeistokeskus Ncb Finland , Lockheed Martin Corporation , Thales Sa , Avago Technologies Us Inc , Hewlett Packard Company |
Manufacturer's List for NSN 5961-01-411-0312, 5961014110312
nimikkeistokeskus ncb finland | lockheed martin corporation | thales sa |
avago technologies us inc | hewlett packard company |
Part Number Related To NSN 5961-01-411-0312, 5961014110312
Part No | NSN | Item Name | QTY | RFQ |
---|---|---|---|---|
10129842 | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
2037AS362-01 | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
91843145 | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
HSMS-2805-BLKG | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
HSMS-2805T | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
HSMS-2805T | 5961-01-411-0312 | semiconductor devic | Avl | RFQ |
Characteristics Data of NSN 5961014110312
MRC | Criteria | Characteristic |
---|---|---|
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
ABMK | OVERALL WIDTH | 2.5 MILLIMETERS MAXIMUM |
ABKW | OVERALL HEIGHT | 1.1 MILLIMETERS MAXIMUM |
ABBH | INCLOSURE MATERIAL | PLASTIC |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-143 |
ABHP | OVERALL LENGTH | 3.0 MILLIMETERS MAXIMUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
TEST | TEST DATA DOCUMENT | 30003-2037AS362 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |