NSN 5961-01-326-7680 of Transistor - Product Details
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| Alternative NSN: 5961-01-326-7680 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013267680 |
| NCB Code: USA (01) |
| Manufacturers: Keysight Technologies Inc , Hewlett Packard Company , Gdi Simulation , Siliconix Incorporated , On Semiconductor Corporation , Freescale Semiconductor Inc |
Manufacturer's List for NSN 5961-01-326-7680, 5961013267680
| keysight technologies inc | hewlett packard company | gdi simulation |
| siliconix incorporated | on semiconductor corporation | freescale semiconductor inc |
Part Number Related To NSN 5961-01-326-7680, 5961013267680
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1855-0555 | 5961-01-326-7680 | transistor | Avl | RFQ |
| 1855-0555 | 5961-01-326-7680 | transistor | Avl | RFQ |
| 74197 | 5961-01-326-7680 | transistor | Avl | RFQ |
| VN0300L | 5961-01-326-7680 | transistor | Avl | RFQ |
| VN0300L | 5961-01-326-7680 | transistor | Avl | RFQ |
| VN0300L | 5961-01-326-7680 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961013267680
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE,DRAIN-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 100.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE,JUNCTION-GATE |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
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