NSN 5961-00-106-7024 of Transistor - Product Details
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| Alternative NSN: 5961-00-106-7024 |
| Item Name:Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001067024 |
| NCB Code: USA (00) |
| Manufacturers: Hewlett Packard Company , Keysight Technologies Inc , Philips Circuit Assemblies , Telcom Semiconductor Inc , Texas Instruments Inc , Itt Semiconductors Div , Raytheon Company , Gilbert Engineering Co Inc Incon , General Semiconductor Industries Inc , General Electric Company , Freescale Semiconductor Inc , Fairchild Semiconductor Corp |
Manufacturer's List for NSN 5961-00-106-7024, 5961001067024
Part Number Related To NSN 5961-00-106-7024, 5961001067024
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1854-0006 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 1854-0006 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
| 2N706 | 5961-00-106-7024 | transistor | Avl | RFQ |
Characteristics Data of NSN 5961001067024
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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